Title :
High-power InP MISFETs
Author :
Armand, M. ; Bui, D.V. ; Chevrier, J. ; Linh, N.T.
Author_Institution :
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Abstract :
InP MISFETs with SiO2 as the gate insulator and a deep channel recess have been fabricated. At 9 GHz the highest power output with 4 dB gain was 3.5 W/mm gate width with 33% power added efficiency. This power is more than twice that of the best GaAs MESFET.
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; power transistors; solid-state microwave devices; 9 GHz; III-V semiconductors; InP MISFETs; SiO2; deep channel recess; gate insulator; microwave devices; power transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830296
