Title :
A pseudomorphic GaInP/InP MESFET with improved device performance
Author :
Lin, K.C. ; Hsin, Y.M. ; Chang, C.Y. ; Chang, E.Y.
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
12/1/1993 12:00:00 AM
Abstract :
A high-bandgap GaInP epitaxial material grown on InP to increase the Schottky barrier height of the InP MESFET is discussed. The Schottky gate materials used in this study were Au and Pt2Si. The pseudomorphic GaInP/InP MESFET with an Au gate has a Schottky barrier height of 0.54 eV, and the reverse leakage current of the device is 10 -2 times lower than that of the conventional InP MESFET. The extrinsic and intrinsic transconductance of the pseudomorphic MESFET are 66.7 and 104.2 mS/mm respectively for the 5-μm-gate-length GaInP/InP MESFET
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium compounds; indium compounds; semiconductor-metal boundaries; 0.54 eV; 104.2 mS/mm; 5 micron; 66.7 mS/mm; Au gate; Au-GaInP-InP; Pt2Si gate; Pt2Si-GaInP-InP; Schottky barrier height; device performance; high-bandgap GaInP epitaxial material; pseudomorphic GaInP/InP MESFET; reverse leakage current; transconductance; Epitaxial growth; FETs; Gold; High-speed electronics; Indium phosphide; Leakage current; MESFETs; Photonic band gap; Schottky barriers; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
