Title :
Origin of the difference between the capacitance intercept voltage and the built-in potential
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
For a diode with an abrupt, constant doping profile, the difference between the built-in potential Vbi and capacitance intercept voltage Vint is shown to be at least 2(kBT/q). The difference lies in the fact that q×Vint is related to the work needed to create this space charge
Keywords :
capacitance; electric potential; p-n homojunctions; semiconductor diodes; space charge; abrupt constant doping profile; built-in potential; capacitance intercept voltage; electrostatic potential difference; n-p diode structure; p-n junction; space charge; Capacitance measurement; Doping profiles; Electrostatics; Equations; Photonic band gap; Potential energy; Semiconductor devices; Semiconductor diodes; Space charge; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
