Title :
Aging characteristics of InGaAsP/InP DFB lasers
Author :
Nakano, Yoshiaki ; Motosugi, G. ; Yoshikuni, Y. ; Ikegami, Tomoaki
Author_Institution :
NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
Abstract :
Aging tests of InGaAsP/InP DFB lasers with a constant light output of 5 mW/facet and ambient temperatures 25°C and 40°C have been carried out. Up to the present, with an aging time of more than 2000 h for six lasers, appreciable degradations have been observed in their driving currents and spectra. This indicates that the corrugation grating near the active region has little influence on short-term reliability of DFB lasers.
Keywords :
III-V semiconductors; ageing; distributed feedback lasers; gallium arsenide; indium compounds; life testing; reliability; semiconductor device testing; semiconductor junction lasers; III-V semiconductors; InGaAsP/InP DFB lasers; ageing characteristics; aging time; ambient temperatures; constant light output; corrugation grating; degradations; driving currents; life testing; semiconductor lasers; short-term reliability; spectra;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830299
