Comments on "Determination of space-dependent electron distribution function by combined use of energy and Boltzmann transport equations: improvement, evaluation, and explanation

Author

Fiegna, Claudio ; Sangiorgi, Enrico

Author_Institution

Bologna Univ., Italy

Volume

40

Issue

12

fYear

1993

Firstpage

2369

Lastpage

2370

Abstract

For original paper, see S.L. Wang et al., ibid., vol.39., no.8, pp. 1821-1828 (Aug. 1992). In the work of Wang et al., an efficient method for obtaining the space-dependent energy electron distribution (EED) was reviewed and some limitations related to its applicability were extensively discussed by comparisons with one dimensional Monte Carlo simulations. Here, the reasons for some of these limits are clarified, and a fundamental limitation which was not considered is presented.<>

Keywords

Boltzmann equation; Monte Carlo methods; carrier density; insulated gate field effect transistors; semiconductor device models; 2D Monte Carlo Poisson simulation; Boltzmann transport equation; MOSFET; applicability limits; electron average energy; electron concentration spatial derivative; homogeneous field approximation; one dimensional Monte Carlo simulations; space-dependent electron distribution function; Boltzmann equation; Computer interfaces; Cooling; Distribution functions; Electrons; Extrapolation; FETs; MOSFET circuits; Marine vehicles; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.249491

Filename

249491