Experimental characterization of on-chip inductor and capacitor interconnect: part II. Shunt case

Author

Yin, W.-Y. ; Li, L.W. ; Pan, S.J. ; Gan, Y.B.

Author_Institution

Temasek Labs., Nat. Univ. of Singapore, Singapore

Volume

40

Issue

3

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

1657

Lastpage

1663

Abstract

We present a wide-band experimental characterization of an on-chip shunt inductor and capacitor (LC) interconnect. (A previous paper by the authors considered the series LC case). In order to capture the effects of parasitic parameters on the wide-band transmission and reflection characteristics of shunt LC interconnects, we propose a generalized frequency-independent circuit model for fast-running simulations. The model is accurate to above its second resonant frequency, with low average simulation errors for both reflection and transmission coefficients compared to the measured two-port S parameters over the frequency range of 1 to 14 GHz.

Keywords

S-parameters; capacitors; circuit simulation; inductors; integrated circuit interconnections; 1 to 14 GHz; capacitor interconnect; fast-running simulations; frequency-independent circuit model; on-chip inductor; on-chip shunt inductor; parasitic parameters; reflection characteristics; reflection coefficients; shunt LC interconnects; simulation errors; transmission coefficients; two-port S parameters; wide-band experimental characterization; wide-band transmission; Capacitors; Circuit simulation; Frequency measurement; Inductors; Integrated circuit interconnections; Reflection; Resonant frequency; Scattering parameters; Shunt (electrical); Wideband; $S$ parameter; Circuit model; first and second resonance frequencies; on-chip shunt $LC$ interconnect; wideband;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2004.826627

Filename

1298941