DocumentCode :
985939
Title :
PIN-bipolar optical receiver using a high-frequency high-beta transistor
Author :
Mitchell, A.F. ; O´Mahony, M.J. ; Boxall, B.A.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Volume :
19
Issue :
12
fYear :
1983
Firstpage :
445
Lastpage :
447
Abstract :
A PIN-photodiode bipolar-transistor optical receiver for the 1.1¿1.6 ¿m wavelength range capable of operation up to 320 Mbit/s is described. Low input capacitance and high DC transistor current gain are shown to be important in achieving good sensitivity, and these factors are emphasised in the design of the receiver and the devices used. Error-rate measurements show a receiver sensitivity of ¿34.5 dBm at 280 Mbit/s.
Keywords :
bipolar transistor circuits; optical communication equipment; photodiodes; receivers; 1.1 to 1.6 micron wavelength range; 320 Mbit/s; DC transistor current gain; bipolar transistor; error rate measurement; high-frequency high-beta transistor; input capacitance; optical communication; optical receiver; p-i-n photodiode; sensitivity;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19830305
Filename :
4247777
Link To Document :
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