Title :
Lasing characteristics of improved GaInAsP/InP surface emitting injection lasers
Author :
Iga, Kenichi ; Soda, H. ; Terakado, T. ; Shimizu, Shogo
Author_Institution :
Tokyo Institute of Technology, Yokohama, Japan
Abstract :
The letter presents a surface-emitting GaInAsP/InP injection laser with 7 ¿m cavity length operating at 1.30 ¿m of wavelength. The threshold was as low as 50 mA at 77 K. The device operated up to 140 K with one single longitudinal mode and small wavelength change (0.64 Å/degree). The near-field diameter was 9 ¿m and the far-field angle (FWHM) was 9°. The polarisation was linear.
Keywords :
III-V semiconductors; gallium arsenide; p-n heterojunctions; semiconductor junction lasers; 1.3 micron operation; GaInAsP/InP; III-V semiconductors; far field radiation angle; lasing characteristics; linear polarisation; near field pattern; p-n heterojunctions; semiconductor lasers; single longitudinal mode; surface emitting injection lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830311
