DocumentCode
986025
Title
InP MIS transistors with grown-in sulphur dielectric
Author
Post, G. ; Dimitriou, P. ; Scavennec, A. ; Duhamel, N. ; Mircea, A.
Author_Institution
Centre National d´Etudes des Télécommunications, Bagneux, France
Volume
19
Issue
13
fYear
1983
Firstpage
459
Lastpage
461
Abstract
We report the first experimental results on accumulation layer InP MISFETs where the gate dielectric is grown into the substrate by chemical reaction with sulphur. These MIS structures have very little hysteresis and very high transistor transconductances.
Keywords
III-V semiconductors; indium compounds; insulated gate field effect transistors; III-V semiconductors; In2S3; InP; InPS4; MISFET; S based insulating layer; accumulation layer; chemical sulphuration; gate dielectric; hysteresis; transconductances;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830313
Filename
4247788
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