Title :
InP MIS transistors with grown-in sulphur dielectric
Author :
Post, G. ; Dimitriou, P. ; Scavennec, A. ; Duhamel, N. ; Mircea, A.
Author_Institution :
Centre National d´Etudes des Télécommunications, Bagneux, France
Abstract :
We report the first experimental results on accumulation layer InP MISFETs where the gate dielectric is grown into the substrate by chemical reaction with sulphur. These MIS structures have very little hysteresis and very high transistor transconductances.
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; III-V semiconductors; In2S3; InP; InPS4; MISFET; S based insulating layer; accumulation layer; chemical sulphuration; gate dielectric; hysteresis; transconductances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830313
