Title :
Frequency modulation on single sideband using controlled dynamics of an optically injected semiconductor laser
Author :
Chan, Sze-Chun ; Liu, Jia-Ming
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA
fDate :
7/1/2006 12:00:00 AM
Abstract :
Nonlinear dynamics of an optically injected semiconductor laser is applied to photonic microwave generation. By properly adjusting the injection conditions, the optical frequency of the slave laser is first locked to the master laser. The slave laser is then driven into a periodic dynamical state, resulting in a single-sideband (SSB) microwave modulation on the optical carrier. The frequency of the SSB can be controlled by the optical injection strength and detuning. Frequency-modulated SSB can, thus, be obtained from a modulated injection. In this work, we experimentally investigate the generated SSB in terms of its broad tunability and fast modulation response. The results suggest application of this system in radio-over-fiber and optical subcarrier multiplexing technologies when microwave frequency modulation or frequency-shift keying is employed
Keywords :
electro-optical modulation; frequency shift keying; laser tuning; microwave photonics; multiplexing; nonlinear dynamical systems; radio-over-fibre; semiconductor lasers; broad SSB tunability; controlled laser dynamics; detuning; fast modulation response; frequency modulation; frequency-shift keying; master laser; microwave modulation; multiplexing technologies; nonlinear dynamics; optical carrier; optical injection; periodic dynamical state; photonic microwave generation; radio-over-fiber; semiconductor laser; single sideband modulation; slave laser; Amplitude modulation; Frequency modulation; Masers; Master-slave; Microwave generation; Microwave technology; Nonlinear optics; Optical control; Optical modulation; Semiconductor lasers; Dynamics; frequency modulation; injection locked oscillators; microwave generation; semiconductor lasers; subcarrier multiplexing;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2006.876712