DocumentCode
986035
Title
Novel design of travelling-wave FET
Author
Wei, Ce-Jun
Author_Institution
Chinese Academy of Sciences, Institute of Semiconductors, Beijing, China
Volume
19
Issue
13
fYear
1983
Firstpage
461
Lastpage
463
Abstract
In the letter we propose a novel travelling-wave FET, in which an additional image gate is placed beside the drain of the FET as a phase velocity synchroniser. Small-signal analysis is given in the light of coupled wave theory and shows that the device is capable of high gain and wide bandwidth amplification. The easy adjustment of phase synchronisation and compability of the conventional FET fabrication technique make it promising for high-frequency distributed amplification.
Keywords
field effect transistors; HF distributed amplification; additional image gate; coupled wave theory; phase synchronisation; phase velocity synchroniser; small-signal analysis; travelling-wave FET;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830314
Filename
4247791
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