Title :
Localisation of defects on SOI films via selective recrystallisation using halogen lamps
Author :
Bensahel, D. ; Haond, M. ; Vu, D.P. ; Colinge, J.P.
Author_Institution :
Centre National d´´Etudes des Télécommunications, Meylan, France
Abstract :
Selective annealing by means of an incoherent light system has been employed to grow single-crystal Si on oxide. This technique allows control of the location of the remaining defects (subgrain boundaries) in the <100> recrystallised film.
Keywords :
elemental semiconductors; grain boundaries; recrystallisation annealing; semiconductor growth; semiconductor-insulator boundaries; silicon; (100) recrystallised film; SOI films; SiO2; defect localisation; elemental semiconductors; halogen lamps; incoherent light system; selective annealing; selective recrystallisation; semiconductor growth; single-crystal Si on oxide; subgrain boundaries;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830316
