Title :
Ultrafast GaAs microwave PIN diode
Author :
Tayrani, R. ; Glew, R.W.
Author_Institution :
GEC Research Laboratories, Hirst Research Centre, Wembley, UK
Abstract :
This letter describes what is believed to be the first successful realisation of GaAs PIN diodes. The vertical structure was grown on an n+ substrate by MOCVD of a 2 ¿m, 1015 cm¿3 unintentionally doped n¿ layer followed by a 0.3 ¿m, 4×1019 cm¿3 Zn doped p+ layer. The isolation and insertion loss of a single shunt-mounted device are typically ¿27 dB and 0.7 dB, respectively. The switching speed of the device was measured to be less than 1 ns.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor diodes; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; GaAs; III-V semiconductors; MOCVD; VPE; Zn doped p+-layer; epitaxial growth; insertion loss; isolation loss; microwave p-i-n diode; n+-substrate; shunt-mounted device; switching speed; unintentionally doped n--layer; vertical structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830325
