Title :
Aging test of MOCVD shallow proton stripe GaInAsP/InP, DH laser diode emitting at 1.5 ¿m
Author :
Razeghi, M. ; Hirtz, P. ; Blondeau, R. ; de Cremoux, B. ; Duchemin, J.P.
Author_Institution :
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Abstract :
We report on the aging of a continuous-wave (CW) GaInAsP/InP double-heterostructure laser emitting at 1.5 ¿m, grown for the first time by MOCVD. This device has been operated at room temperature for more than 104 h without significant degradation.
Keywords :
III-V semiconductors; ageing; chemical vapour deposition; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor junction lasers; 1.5 micron; DH laser diode; GaInAsP/InP; III-V semiconductor; MOCVD; ageing tests; double-heterostructure laser; semiconductor lasers; shallow proton stripe;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830327
