Title :
Regrowth of amorphous layers in silicon-on-insulator structures formed by the implantation of oxygen
Author :
Hemment, P.L.F. ; Maydell-Ondrusz, E.A. ; Stephens, K.G. ; Scovell, P.D.
Author_Institution :
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Abstract :
Synthesised silicon-on-insulator structures have been formed and implanted with 1×1016 As+ cm¿2 at 40 keV. The regrowth kinetics of the amorphised layer, which also contains lattice defects and excess oxygen, has been studied by Rutherford backscattering. The regrowth of the layer occurs at a mean rate of 13 Å min¿1 at 500°C with an activation energy of 2.7±0.2 eV. This experiment further demonstrates the suitability of these synthesised structures as a direct replacement for bulk silicon in VLSI technology.
Keywords :
amorphous semiconductors; arsenic; elemental semiconductors; ion implantation; particle backscattering; semiconductor doping; semiconductor growth; semiconductor-insulator boundaries; silicon; silicon compounds; As+ implantation; O implanted layer; Rutherford backscattering; Si-on-insulator structure; Si:As; SiO2; VLSI technology; amorphous layers; lattice defects; regrowth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830328
