• DocumentCode
    986357
  • Title

    Amorphous-silicon FET array for LCD panel

  • Author

    Katoh, Kentaroh ; Yasui, Motoaki ; Kuniyasu, S. ; Watanabe, H

  • Author_Institution
    Stanley Electric Co., Research & Development Laboratory, Yokohama, Japan
  • Volume
    19
  • Issue
    14
  • fYear
    1983
  • Firstpage
    506
  • Lastpage
    507
  • Abstract
    A small 20 × 20 dot matrix array of a FET has been fabricated on a glass substrate using a-Si films as the semiconductor and silicon nitride deposited from a N2-SiH4 mixture as the gate insulator. Good operation is obtained for both TN-mode and GH-mode in transparent-type LCDs. The improved fabrication process and structure are reported.
  • Keywords
    amorphous semiconductors; elemental semiconductors; insulated gate field effect transistors; liquid crystal displays; silicon; thin film circuits; thin film transistors; 20*20 dot matrix array; GH-mode; Si3N4 gate insulator; TN-mode; a-Si films; amorphous Si FET array; fabrication process; glass substrate; guest-host mode; liquid crystal display panel; semiconductor; twisted nematic mode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830344
  • Filename
    4247833
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=986357