Title :
Injection-locked 1.5 ¿m InGaAsP/InP lasers capable of 450 Mbit/s transmission over 106 km
Author :
Nishimoto, H. ; Kuwahara, Hideo ; Motegi, Manabu
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
The fluctuation of longitudinal modes of a high-bit-rate modulated 1.5 ¿m InGaAsP/InP laser is greatly improved by injection-locking technology. A 106 km transmission at 300 Mbit/s and 450 Mbit/s was achieved with tolerable transmission losses of 37.2 dB and 36.2 dB, respectively, which implies a potential transmission distance of over 145 km.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; optical communication equipment; semiconductor junction lasers; 1.5 micron wavelength; 106 km transmission; 300 Mbit/s; 450 Mbit/s transmission; InGaAsP/InP lasers; injection-locking technology; longitudinal modes; optical communication; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830346
