DocumentCode :
986391
Title :
Simplifying the Design of ΣΔModulators Using FGMOS Transistors
Author :
Rodriguez-Villegas, Esther ; Xu, Min
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. London, London, UK
Volume :
56
Issue :
7
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
1313
Lastpage :
1325
Abstract :
This paper presents the novel design of a second-order continuous-time low-power and low-voltage SigmaDelta modulator. The modulator illustrates a design philosophy based on taking advantage of the extended number of degrees of freedom of the floating-gate MOS transistor. The transistor is simultaneously used to fulfill the following: simplify the topology; accurately implement the modulator coefficients; compensate for gain losses in the integrator and several nonidealities in the comparator; increase the signal range; reduce distortion; shift signal levels according to the specific requirements of individual devices; implement an easy common-mode sensing and feedback strategy; and tune the loop filter and reset the comparator. The modulator operates at 1 V and consumes just over 5 muW of power for a signal-to-noise-and-distortion ratio of 60 dB and a maximum bandwidth of 2 kHz, which are typical of many biomedical applications.
Keywords :
MOSFET; logic design; low-power electronics; network topology; sigma-delta modulation; FGMOS transistor; bandwidth 2 kHz; common-mode sensing; degrees of freedom; floating-gate MOS transistor; loop filter; low-voltage SigmaDelta modulator; power 5 muW; second-order continuous-time low-power modulator; shift signal level; signal-to-noise-and-distortion ratio; voltage 1 V; ΣΔ modulator; Floating-gate MOS (FGMOS); low-power analog;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2008.2007061
Filename :
4671070
Link To Document :
بازگشت