Title :
Physical mechanisms of bandgap-narrowing in silicon
Author :
Zago¿¿d¿¿on-Wosik, W. ; Ku¿¿micz, W.
Author_Institution :
CEMI, Research & Production Semiconductor Centre, Warszawa, Poland
Abstract :
Experimental evidence of lattice damage strain-induced bandgap-narrowing is given. This effect is used to explain some of the discrepancies between various bandgap-narrowing values published so far.
Keywords :
elemental semiconductors; energy gap; heavily doped semiconductors; silicon; Si; heavily doped semiconductor; lattice damage strain-induced bandgap-narrowing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830350
