• DocumentCode
    986415
  • Title

    Physical mechanisms of bandgap-narrowing in silicon

  • Author

    Zago¿¿d¿¿on-Wosik, W. ; Ku¿¿micz, W.

  • Author_Institution
    CEMI, Research & Production Semiconductor Centre, Warszawa, Poland
  • Volume
    19
  • Issue
    14
  • fYear
    1983
  • Firstpage
    515
  • Lastpage
    516
  • Abstract
    Experimental evidence of lattice damage strain-induced bandgap-narrowing is given. This effect is used to explain some of the discrepancies between various bandgap-narrowing values published so far.
  • Keywords
    elemental semiconductors; energy gap; heavily doped semiconductors; silicon; Si; heavily doped semiconductor; lattice damage strain-induced bandgap-narrowing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830350
  • Filename
    4247842
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=986415