Title :
Dual high-κ gate dielectric with poly gate electrode: HfSiON on nMOS and Al2O3 capping layer on pMOS
Author :
Li, Hong-Jyh ; Gardner, Mark I.
Author_Institution :
Int. SEMATECH, Austin, TX, USA
fDate :
7/1/2005 12:00:00 AM
Abstract :
In this letter, a novel dual high-κ approach, different high-κ dielectrics in nMOS and pMOS, with poly Si gate electrode is introduced. By turning the Fermi-pinning effect into an advantage, this dual high-κ approach achieved a lower Vtp and a symmetrical Vtn/Vtp over a wide range of channel lengths for potential high-κ/poly Si CMOS application. In addition to the Vt control, this approach also can improve the drive current ratio between nMOS and pMOS, which would further scale the CMOS area by reducing the pMOS width.
Keywords :
CMOS integrated circuits; Fermi level; aluminium compounds; dielectric devices; dielectric thin films; hafnium compounds; permittivity; silicon compounds; Al2O3; Fermi-pinning effect; HfSiON; Si CMOS application; capping layer; channel lengths; dielectric devices; dielectric films; drive current ratio; dual high-κ gate dielectric; nMOS; pMOS; poly gate electrode; Capacitance; Dielectric devices; Dielectric films; Electrodes; Leakage current; MOS devices; MOSFET circuits; Threshold voltage; Transistors; Turning; HfSiON; dielectric devices; dielectric films;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.851093
