Title :
Planar structure AlGaAs/GaAs pin photodiode grown by MOCVD
Author :
Ito, Minora ; Wada, O. ; Miura, Shun ; Nakai, K. ; Sakurai, Takayasu
Author_Institution :
Fujitsu Ltd, Opto-semiconductor Devices Laboratories, Atsugi, Japan
Abstract :
A planar structure AlGaAs/GaAs PIN photodiode was fabricated by first using MOCVD. The p+-region was formed by Zn-diffusion in a high-resistivity AlGaAs window layer. The internal quantum efficiency, close to unity, and the cut-off frequency, as high as 1.2 GHz, have been demonstrated by 280 ¿m diameter devices.
Keywords :
CVD coatings; III-V semiconductors; aluminium compounds; gallium arsenide; photodiodes; AlGaAs/GaAs p-i-n photodiode; MOCVD; Zn-diffusion; cut-off frequency; high-resistivity AlGaAs window layer; internal quantum efficiency; metalorganic chemical vapour deposition; planar structure; semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830355
