Title :
1.55 ¿m multisection ridge lasers
Author :
Bowers, John E. ; Coldren, Larry A. ; Hemenway, B.R. ; Miller, B.I. ; Martin, R.J.
Author_Institution :
Bell Laboratories, Holmdel, USA
Abstract :
A new 1.55 ¿m wavelength GaInAsP laser is described: the multisection ridge laser. Pulsed thresholds were typically 40¿80 mA. CW thresholds were comparable. The lowest measured CW threshold was 38 mA at 12°C. The laser operated stably in a single longitudinal mode (spurious modes down by ¿16 dB) under fast pulse modulation with a prebias below threshold. Theoretical results based on a waveguide scattering theory are in qualitative agreement with the experimental results.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.55 micron wavelength; CW thresholds; GaInAsP laser; fast pulse modulation; multisection ridge lasers; pulsed thresholds; semiconductor laser; single longitudinal mode; waveguide scattering theory;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830356
