Title :
Performance and reliability of poly-Si TFTs on FSG buffer layer
Author :
Wang, Shen De ; Chang, Tzu Yun ; Chien, Chao Hsin ; Lo, Wei Hsiang ; Sang, Jen Yi ; Lee, Jam Wen ; Lei, Tan Fu
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
7/1/2005 12:00:00 AM
Abstract :
A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.
Keywords :
buffer layers; fluorine; leakage currents; semiconductor device reliability; silicon compounds; thin film transistors; FSG buffer layer; Si; Si-F bonds; field-effect mobility; fluorinated silicate oxide; fluorine concentration; hot carrier stressing; leakage current; poly-Si TFT; polycrystalline silicon TFT; thin film transistor; Atomic layer deposition; Buffer layers; Chaos; Chemical vapor deposition; Glass; Grain boundaries; Leakage current; Silicon; Substrates; Thin film transistors; Buffer layer; fluorinated silicate oxide (FSG); fluorine; polycrystalline silicon thin-film transistors (poly-Si TFTs); reliability;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.851242
