Title :
4 kV 4H-SiC epitaxial emitter bipolar junction transistors
Author :
Balachandran, Santhosh ; Chow, T.P. ; Agarwal, A. ; Scozzie, C. ; Jones, K.A.
Author_Institution :
Dept. of Electr., Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
7/1/2005 12:00:00 AM
Abstract :
In this paper, we present 4H-SiC bipolar junction transistors (BJTs) with open-base blocking voltage (BVCEO) of 4000 V, specific on-resistance (Ron,sp) of 56 mΩ-cm2, and common-emitter current gain β∼9. These devices are designed with interdigitated base and emitter fingers with multiple emitter stripes. We assess the impact of design (emitter stripe width and contact spacing) on device performance and also examine the effect of emitter contact resistance on the device forward conduction characteristics.
Keywords :
heterojunction bipolar transistors; power semiconductor devices; silicon compounds; wide band gap semiconductors; 4 kV; SiC; common-emitter current gain; emitter contact resistance; emitter fingers; epitaxial emitter bipolar junction transistors; forward conduction characteristics; interdigitated base; multiple emitter stripes; open-base blocking voltage; power semiconductor devices; specific on-resistance; Annealing; Contact resistance; Current density; Fingers; MOSFETs; Silicon carbide; Substrates; Temperature; Thermal conductivity; Voltage; 4H-SiC; bipolar junction transistor (BJT); emitter contact resistance; power semiconductor devices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.851174
