Title :
InGaAs avalanche photodiodes for 1 ¿m wavelength region
Author :
Shirai, Tokimasa ; Mikawa, T. ; Kaneda, Tadahiro ; Miyauchi, Arata
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
A low-noise, low-dark-current and high-speed InGaAs avalanche photodiode (APD) has been designed and fabricated. The diode has a planar structure and is composed of InP/InGaAsP/InGaAs/InP layers grown on (111)A oriented InP. At a multiplication of 10, the diode exhibited excess noise factor of 5 and cutoff frequency of more than 1 GHz. Dark current was 10 nA near breakdown voltage. The diode has been tested in an experimental optical receiver in the gigabit range (time slot 0.63 ns) and 1.3 ¿m. The receiver sensitivity of ¿29.2 dBm was obtained at an error rate of 10¿11.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; 1 micron wavelength region; InGaAs avalanche photodiodes; InP/InGaAsP/InGaAs/InP layers; cutoff frequency; dark current; excess noise factor; planar structure; receiver sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830363
