Title :
High-speed planar InP/InGaAs avalanche photodiode fabricated by vapour phase epitaxy
Author :
Ando, Hideki ; Yamauchi, Yuji ; Susa, N.
Author_Institution :
NTT, Electrical Communication Laboratories, Musashino, Japan
Abstract :
A high-speed planar InP/InGaAs avalanche photodiode (APD) with p--n¿-n reach-through structure was realised by vapour phase epitaxy and Zn double diffusion. The criterion for achieving a high-speed response has been revealed. Performance of the InGaAs/InP-APD was confirmed to exceed that for Ge-APD in a 2 Gbit s transmission experiment.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; semiconductor growth; vapour phase epitaxial growth; 2 Gbit/s transmission experiment; APD; Zn double diffusion; high-speed response; p+ -n-n reach-through structure; planar InP/InGaAs avalanche photodiode; vapour phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830368
