• DocumentCode
    986615
  • Title

    High-speed planar InP/InGaAs avalanche photodiode fabricated by vapour phase epitaxy

  • Author

    Ando, Hideki ; Yamauchi, Yuji ; Susa, N.

  • Author_Institution
    NTT, Electrical Communication Laboratories, Musashino, Japan
  • Volume
    19
  • Issue
    14
  • fYear
    1983
  • Firstpage
    543
  • Lastpage
    545
  • Abstract
    A high-speed planar InP/InGaAs avalanche photodiode (APD) with p--n¿-n reach-through structure was realised by vapour phase epitaxy and Zn double diffusion. The criterion for achieving a high-speed response has been revealed. Performance of the InGaAs/InP-APD was confirmed to exceed that for Ge-APD in a 2 Gbit s transmission experiment.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; semiconductor growth; vapour phase epitaxial growth; 2 Gbit/s transmission experiment; APD; Zn double diffusion; high-speed response; p+ -n-n reach-through structure; planar InP/InGaAs avalanche photodiode; vapour phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830368
  • Filename
    4247860
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=986615