Title :
Low noise RF MOSFETs on flexible plastic substrates
Author :
Kao, H.L. ; Chin, A. ; Hung, B.F. ; Lee, C.F. ; Lai, J.M. ; McAlister, S.P. ; Samudra, G.S. ; Won Jong Yoo ; Chi, C.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
7/1/2005 12:00:00 AM
Abstract :
We report a low minimum noise figure (NFmin) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-μm RF MOSFETs, after thinning down the Si substrate to 30 μm and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NFmin to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-μm node (L/sub g/=80 nm) devices.
Keywords :
MOSFET; elemental semiconductors; semiconductor device noise; silicon; 0.18 micron; 1.1 dB; 10 GHz; 12 dB; RF noise; flexible plastic substrates; low noise RF MOSFET; mechanically strained RF MOSFET; saturation drain current; Coplanar transmission lines; Coplanar waveguides; Councils; MOSFETs; Noise figure; Noise measurement; Plasma measurements; Plastics; Radio frequency; Tensile strain; Associated gain; MOSFET; RF noise; plastic;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.851238
