Title :
Schottky barrier diodes for millimeter wave detection in a foundry CMOS process
Author :
Sankaran, S. ; O, K.K.
Author_Institution :
Silicon Microwave Integrated Circuits & Syst. Res. Group, Univ. of Florida, Gainesville, FL, USA
fDate :
7/1/2005 12:00:00 AM
Abstract :
CoSi2-Si Schottky barrier diodes on an n-well and on a p-well/substrate are fabricated without a guard ring in a 130-nm foundry CMOS process. The nand p-type diodes with an area of 16×0.32×0.32 μm2 achieve cutoff frequencies of /spl sim/1.5 and /spl sim/1.2 THz at 0-V bias, respectively. These are the highest cutoff frequencies for Schottky diodes fabricated in foundry silicon processes. The leakage currents at 1.0-V reverse bias vary between 0.4 to 10 nA for the n-type diodes. The break down voltage for these diodes is around 15 V. It should be possible to use these in millimeter wave and far infrared detection.
Keywords :
CMOS integrated circuits; Schottky diodes; cobalt compounds; millimetre wave diodes; silicon; 0.4 to 10 nA; 130 nm; CoSi/sub 2/-Si; Schottky barrier diodes; breakdown voltage; cutoff frequency; far infrared detection; foundry CMOS process; guard ring; leakage currents; millimeter wave detection; n-type diodes; p-type diodes; CMOS process; Contact resistance; Cutoff frequency; Foundries; Infrared detectors; Millimeter wave technology; Parasitic capacitance; Schottky barriers; Schottky diodes; Silicon; Cutoff frequency; Schottky barrier diodes; silicon; terahertz (THz);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.851127