Schottky barrier diodes for millimeter wave detection in a foundry CMOS process

Author

Sankaran, S. ; O, K.K.

Author_Institution

Silicon Microwave Integrated Circuits & Syst. Res. Group, Univ. of Florida, Gainesville, FL, USA

Volume

26

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

492

Lastpage

494

Abstract

CoSi₂-Si Schottky barrier diodes on an n-well and on a p-well/substrate are fabricated without a guard ring in a 130-nm foundry CMOS process. The nand p-type diodes with an area of 16×0.32×0.32 μm² achieve cutoff frequencies of /spl sim/1.5 and /spl sim/1.2 THz at 0-V bias, respectively. These are the highest cutoff frequencies for Schottky diodes fabricated in foundry silicon processes. The leakage currents at 1.0-V reverse bias vary between 0.4 to 10 nA for the n-type diodes. The break down voltage for these diodes is around 15 V. It should be possible to use these in millimeter wave and far infrared detection.

Keywords

CMOS integrated circuits; Schottky diodes; cobalt compounds; millimetre wave diodes; silicon; 0.4 to 10 nA; 130 nm; CoSi/sub 2/-Si; Schottky barrier diodes; breakdown voltage; cutoff frequency; far infrared detection; foundry CMOS process; guard ring; leakage currents; millimeter wave detection; n-type diodes; p-type diodes; CMOS process; Contact resistance; Cutoff frequency; Foundries; Infrared detectors; Millimeter wave technology; Parasitic capacitance; Schottky barriers; Schottky diodes; Silicon; Cutoff frequency; Schottky barrier diodes; silicon; terahertz (THz);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.851127

Filename

1458966