Title :
High-/spl kappa/ Ir/TiTaO/TaN capacitors suitable for analog IC applications
Author :
Chiang, K.C. ; Huang, C.C. ; Chin, A. ; Chen, W.J. ; McAlister, S.P. ; Chiu, H.F. ; Jiann-Ruey Chen ; Chi, C.C.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
7/1/2005 12:00:00 AM
Abstract :
We have developed novel high-/spl kappa/ Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/μm2), small leakage current at 2 V (1.2×10/sup -8/ A/cm2), and low voltage linearity of the capacitance (89 ppm/V2). These excellent results meet the ITRS roadmap requirements for precision analog capacitors for the year 2018. The good performance is due to the very high /spl kappa/ (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode.
Keywords :
MIM devices; analogue integrated circuits; capacitors; dielectric materials; iridium; tantalum compounds; titanium compounds; Ir-TiTaO-TaN; MIM capacitors; TiTaO dielectric; analog IC applications; leakage currents; precision analog capacitors; voltage linearity; work function; Analog integrated circuits; Application specific integrated circuits; Capacitance; Dielectric devices; Electrodes; Leakage current; Linearity; Low voltage; MIM capacitors; Materials science and technology; ITRS; Ir; MIM; TiTaO; analog;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.851241
