High-/spl kappa/ Ir/TiTaO/TaN capacitors suitable for analog IC applications

Author

Chiang, K.C. ; Huang, C.C. ; Chin, A. ; Chen, W.J. ; McAlister, S.P. ; Chiu, H.F. ; Jiann-Ruey Chen ; Chi, C.C.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

26

Issue

7

fYear

2005

fDate

7/1/2005 12:00:00 AM

Firstpage

504

Lastpage

506

Abstract

We have developed novel high-/spl kappa/ Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/μm²), small leakage current at 2 V (1.2×10/sup -8/ A/cm²), and low voltage linearity of the capacitance (89 ppm/V²). These excellent results meet the ITRS roadmap requirements for precision analog capacitors for the year 2018. The good performance is due to the very high /spl kappa/ (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode.

Keywords

MIM devices; analogue integrated circuits; capacitors; dielectric materials; iridium; tantalum compounds; titanium compounds; Ir-TiTaO-TaN; MIM capacitors; TiTaO dielectric; analog IC applications; leakage currents; precision analog capacitors; voltage linearity; work function; Analog integrated circuits; Application specific integrated circuits; Capacitance; Dielectric devices; Electrodes; Leakage current; Linearity; Low voltage; MIM capacitors; Materials science and technology; ITRS; Ir; MIM; TiTaO; analog;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.851241

Filename

1458970