Title :
100 GHz bandwidth planar GaAs Schottky photodiode
Author :
Wang, S.Y. ; Bloom, D.M.
Author_Institution :
Hewlett-Packard Laboratories, Palo Alto, USA
Abstract :
In the letter we report the development and characterisation of a planar-structure GaAs Schottky-barrier photodiode whose response to a mode-locked laser pulse of 600 nm wavelength has a full-width half-maximum of 5.4 ps and a 3 dB bandwidth of 100 GHz.
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; photodiodes; 100 GHz bandwidth; 600 nm wavelength; full-width half-maximum; mode-locked laser pulse; planar GaAs Schottky photodiode; semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830376
