DocumentCode
986779
Title
Electrical measurements on silver-diffused InP
Author
Tuck, Brian ; Chaoui, R.
Author_Institution
University of Nottingham, Department of Electrical & Electronic Engineering, Nottingham, UK
Volume
19
Issue
15
fYear
1983
Firstpage
565
Lastpage
567
Abstract
Electrical measurements were made on n-type InP before and after diffusion with silver. No change was observed in the electron concentration and it is proposed that most of the silver atoms in the bulk were in the form of positive interstitial ions, giving rise to deep donor states.
Keywords
III-V semiconductors; carrier density; deep levels; diffusion in solids; electrical conductivity of crystalline semiconductors and insulators; indium compounds; Ag diffusion; III-V semiconductors; deep donor states; electron concentration; n-InP; positive interstitial ions;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830385
Filename
4247880
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