Title :
Thermally accelerated degradation of 1.3 ¿m BH lasers
Author :
Nakano, Yoshiaki ; Fukuda, Motohisa ; Sudo, H. ; Fujita, O. ; Iwane, G.
Author_Institution :
NTT Atsugi Electrical Communication Laboratory, Atsugi, Japan
Abstract :
An investigation has been made into the thermally accelerated degradation in ACC lifetests for 1.3 ¿m BH lasers. The CW threshold current under high-stress aging has been evaluated at various temperatures. An increase in the CW threshold current was observed which could be represented as a combination of two linear variations. It was found that the rapid increase of the CW threshold current was dependent on the evaluation temperature, which could be an important parameter in assessing the degradation of InGaAsP lasers.
Keywords :
III-V semiconductors; ageing; gallium arsenide; indium compounds; life testing; 1.3 microns; ACC lifetests; CW threshold current; III-V semiconductors; InGaAsP lasers; buried heterostructure; high-stress aging; thermally accelerated degradation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830386
