• DocumentCode
    986965
  • Title

    Attenuation measurements on MOCVD-grown GaAs/GaAlAs optical waveguides

  • Author

    Walker, R.G. ; Goodfellow, R.C.

  • Author_Institution
    Plessey Research (Caswell) Limited, Allen Clark Research Centre, Towcester, UK
  • Volume
    19
  • Issue
    15
  • fYear
    1983
  • Firstpage
    590
  • Lastpage
    592
  • Abstract
    We report loss measurements on MOCVD-grown GaAs/GaAlAs optical waveguides, by sequential cleaving with allowance for Fabry-Perot resonator effects. Upper bound values are 1.4 dB/cm for strip-loaded and 2.5 dB/cm for fully etched ridge waveguides.
  • Keywords
    III-V semiconductors; aluminium compounds; attenuation measurement; chemical vapour deposition; gallium arsenide; integrated optics; optical waveguides; semiconductor growth; Fabry-Perot resonator effects; GaAs/GaAlAs optical waveguides; MOCVD-grown; optical attenuation measurement; ride waveguides; sequential cleaving;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830403
  • Filename
    4247898
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=986965