• DocumentCode
    986991
  • Title

    GaInAsP/InP buried-heterostructure optical waveguides at a 1.5 µm wavelength

  • Author

    Mikami, Osamu ; Nakagome, Hideki ; Saitoh, Takashi

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    19
  • Issue
    15
  • fYear
    1983
  • Firstpage
    593
  • Lastpage
    595
  • Abstract
    Buried-heterostructure GaInAsP/InP optical waveguides at a 1.5 ¿m wavelength have been fabricated and a propagation loss of 2¿2.5 cm¿1 was obtained.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optics; monolithic integrated circuits; optical waveguides; 1.5 micron wavelength; GaInAsP/InP optical waveguides; III-V semiconductors; buried-heterostructure optical waveguides; monolithic integrated optical circuits; propagation loss;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830405
  • Filename
    4247900
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=986991