Title :
GaInAsP/InP buried-heterostructure optical waveguides at a 1.5 µm wavelength
Author :
Mikami, Osamu ; Nakagome, Hideki ; Saitoh, Takashi
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Buried-heterostructure GaInAsP/InP optical waveguides at a 1.5 ¿m wavelength have been fabricated and a propagation loss of 2¿2.5 cm¿1 was obtained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; monolithic integrated circuits; optical waveguides; 1.5 micron wavelength; GaInAsP/InP optical waveguides; III-V semiconductors; buried-heterostructure optical waveguides; monolithic integrated optical circuits; propagation loss;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830405
