Title :
Anodic oxide gate a-Si:H MOSFET
Author :
Yamamoto, H. ; Sawada, T. ; Arimoto, S. ; Hasegawa, H. ; Ohno, H.
Author_Institution :
Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
Abstract :
The first a-Si:H MOSFET having native oxide at the insulator/a-Si:H interface is reported. Anodic oxidation in the AGW electrolyte is applied to Al/a-Si:H structures to form Al2O3/native oxide/a-Si:H gate structures. Resulting FETs show typical effective mobilities of 0.02 cm2/V s after proper low-temperature annealing in H2. Anodic oxidation is thus proved to be applicable to a-Si:H device technology as a low-temperature oxidation process.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; insulated gate field effect transistors; semiconductor technology; silicon; AGW electrolyte; Al2O3/native oxide/a-Si:H gate structures; MOSFET; Si:H; amorphous semiconductors; anodic oxidation; effective mobilities; low-temperature annealing; low-temperature oxidation process; native oxide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830413
