Title :
Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates
Author :
Verhulst, Anne S. ; Vandenberghe, William G. ; Maex, Karen ; De Gendt, Stefan ; Heyns, Marc M. ; Groeseneken, Guido
Author_Institution :
IMEC, Leuven
Abstract :
As a solution to the low on-current of silicon-based tunnel-FETs (TFETs), the source material of the n-channel TFET is replaced with the small-bandgap material germanium, which results in a current boost up to the same level as the current of MOSFETs. However, no solution has been reported to boost the on-current of the all-silicon p-TFET, a necessity for making an inverter and competing with the MOSFET. We have investigated the heterostructure TFET with respect to complementarity based on our semi-analytical model, and we propose the InxGa1 - xAs-source silicon-TFET as p-TFET. This design is particularly applicable to nanowire-based transistor architectures. We discuss the complementarity of the I-V curves, and we analyze the threshold voltage behavior of the complementary TFETs.
Keywords :
energy gap; field effect transistors; germanium; complementary silicon-based heterostructure; germanium; high tunnel rates; nanowire-based transistor architecture; semianalytical model; silicon-based tunnel-FET; small-bandgap material; threshold voltage behavior; Circuits; Dielectric materials; Germanium; Heterojunctions; Inverters; MOSFETs; Nanotechnology; Silicon; Threshold voltage; Tunneling; Complementary circuits; heterojunctions; nanotechnology; tunnel transistors; tunneling;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2007599
