Title :
Annealing behaviour of gamma-ray-induced electron traps in LEC n-InP
Author :
Koyama, Jun ; Shirafuji, J. ; Inuishi, Y.
Author_Institution :
Osaka University, Department of Electrical Engineering, Faculty of Engineering, Suita, Japan
Abstract :
The annealing behaviour of a gamma-ray-induced dominant electron trap (Ec ¿ 0.79 eV) in LEC undoped n-InP is studied by means of the DLTS technique. The isothermal annealing experiment shows it is a first-order process with an activation energy of 0.98 eV; this value is much smaller than those found in room-temperature-irradiated n-GaAs.
Keywords :
III-V semiconductors; annealing; deep level transient spectroscopy; electron traps; indium compounds; DLTS; III-V semiconductors; LEC n-InP; activation energy; annealing behaviour; gamma-ray-induced electron traps; isothermal annealing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830415
