• DocumentCode
    987098
  • Title

    Annealing behaviour of gamma-ray-induced electron traps in LEC n-InP

  • Author

    Koyama, Jun ; Shirafuji, J. ; Inuishi, Y.

  • Author_Institution
    Osaka University, Department of Electrical Engineering, Faculty of Engineering, Suita, Japan
  • Volume
    19
  • Issue
    16
  • fYear
    1983
  • Firstpage
    609
  • Lastpage
    611
  • Abstract
    The annealing behaviour of a gamma-ray-induced dominant electron trap (Ec ¿ 0.79 eV) in LEC undoped n-InP is studied by means of the DLTS technique. The isothermal annealing experiment shows it is a first-order process with an activation energy of 0.98 eV; this value is much smaller than those found in room-temperature-irradiated n-GaAs.
  • Keywords
    III-V semiconductors; annealing; deep level transient spectroscopy; electron traps; indium compounds; DLTS; III-V semiconductors; LEC n-InP; activation energy; annealing behaviour; gamma-ray-induced electron traps; isothermal annealing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830415
  • Filename
    4247911
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=987098