A new and simple model for GaAs heterojunction FET gate characteristics

Author

Chen, Chung-Hsu ; Baier, Steven M. ; Arch, David K. ; Shur, Michael S.

Author_Institution

Honeywell Inc., Bloomington, MN, USA

Volume

35

Issue

5

fYear

1988

fDate

5/1/1988 12:00:00 AM

Firstpage

570

Lastpage

577

Abstract

The gate current-voltage characteristics for modulation-doped field-effect transistors (MODFETs) and heterostructure insulated-gate field-effect transistors (HIGFETs) are described using a simple model. This model, which is physically realistic, consists of two Schottky diodes in series: one is a metal-semiconductor (AlGaAs) Schottky diode and the other is an equivalent Schottky diode due to the heterojunction between the AlGaAs and GaAs. A novel technique is developed to characterize the parameters used for this model. The model is used to estimate the effective electron temperature in the channel close to the drain for MODFETs. The estimated electron temperature with 1 V drain-to-source voltage is as high as 80°C at room temperature. Very good agreement between the calculated and measured results is obtained. This model and characterization technique are also suitable for other heterojunction FETs such as quantum-well MODFETs, etc

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; insulated gate field effect transistors; semiconductor device models; AlGaAs-GaAs; HIGFETs; MODFETs; Schottky diodes; effective electron temperature; gate current-voltage characteristics; heterojunction FET gate characteristics; heterostructure insulated-gate field-effect transistors; model; parameter characterisation; Current-voltage characteristics; Electrons; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Heterojunctions; MODFETs; Schottky diodes; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2499

Filename

2499