• DocumentCode
    987163
  • Title

    Field ionised impurity scattering in an AlGaAs/GaAs two-dimensional electron gas

  • Author

    Livingstone, A. ; Tsubaki, Keishi ; Kawashima, Mitsumasa ; Okamoto, Hiroshi ; Kumabe, K.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    19
  • Issue
    16
  • fYear
    1983
  • Firstpage
    619
  • Lastpage
    620
  • Abstract
    Low field-mobility saturation has been observed in AlGaAs/GaAs heterostructures. Under illumination, the mobility decreases and the carrier concentration increases at high fields. Both effects are thought to be due to ionisation of a centre in the GaAs, probably oxygen. The experimental results are explained in terms of a simple trap model.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier density; electron gas; gallium arsenide; impurity scattering; AlGaAs/GaAs heterostructures; III-V semiconductors; carrier concentration; low field-mobility saturation; trap model; two-dimensional electron gas;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830422
  • Filename
    4247920
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=987163