Title :
Field ionised impurity scattering in an AlGaAs/GaAs two-dimensional electron gas
Author :
Livingstone, A. ; Tsubaki, Keishi ; Kawashima, Mitsumasa ; Okamoto, Hiroshi ; Kumabe, K.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Low field-mobility saturation has been observed in AlGaAs/GaAs heterostructures. Under illumination, the mobility decreases and the carrier concentration increases at high fields. Both effects are thought to be due to ionisation of a centre in the GaAs, probably oxygen. The experimental results are explained in terms of a simple trap model.
Keywords :
III-V semiconductors; aluminium compounds; carrier density; electron gas; gallium arsenide; impurity scattering; AlGaAs/GaAs heterostructures; III-V semiconductors; carrier concentration; low field-mobility saturation; trap model; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830422
