Title :
Schottky Barrier N-Type Thin Film Transistors With Polycrystalline Silicon Channel and Er-Silicided Metallic Junctions
Author :
Shin, Jin-Wook ; Choi, Chel-Jong ; Jang, Moongyu ; Cho, Won-Ju
Author_Institution :
Dept. of Electron. Mater. Eng., Kwangwoon Univ., Seoul
Abstract :
N-type Schottky barrier thin film transistors (SB-TFTs) with polycrystalline silicon channel and metallic junctions were fabricated by using Er silicidation, and electrical structural properties were compared to conventional TFTs with phosphorous-doped source/drain regions. The performances of SB-TFTs are better than that of the conventional TFTs. A forming gas annealing process leads to a great improvement in the characteristics of both devices. In particular, excellent electrical characteristics were obtained from the forming gas annealed SB-TFTs: the subthreshold swing of 180 mV/dec, the drive current of 1.47 times 10-5 A, and the on/off current ratio of 5 times 106.
Keywords :
Schottky barriers; annealing; elemental semiconductors; erbium compounds; silicon; thin film transistors; ErSi; N-type Schottky barrier thin film transistors; conventional TFT comparison; drive current; electrical structural properties; erbium silicided metallic junction fabrication; forming gas annealed SB-TFT electrical characteristics; forming gas annealing process; on/off current ratio; phosphorous-doped source/drain regions; polycrystalline silicon channel; subthreshold swing; Annealing; Erbium; MOSFETs; Nanoscale devices; Schottky barriers; Semiconductor films; Silicides; Silicon; Temperature; Thin film transistors; Er silicide; forming gas annealing (FGA); metallic junction; poly-Si Schottky barrier TFT (SB-TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2007511