Title :
a-Si:H MIS position sensitive detector by anodic oxidation processes
Author :
Arimoto, S. ; Yamamoto, Hiroshi ; Ohno, Hideo ; Hasegawa, Hiroshi
Author_Institution :
Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
Abstract :
The first fabrication of an amorphous silicon position-sensitive detector using an MIS structure by anodic oxidation processes is reported. The fabricated 3 mm × 26 mm one-dimensional position-sensitive detectors show excellent linearity with lateral photocurrent response, having a correlation coefficient of 0.996.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; metal-insulator-semiconductor devices; photodetectors; semiconductor thin films; silicon; MIS position sensitive detector; amorphous Si:H films; anodic oxidation processes; lateral photocurrent response; one dimensional structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830428
