Graphene Nanoribbon Tunnel Transistors

Author

Zhang, Qin ; Fang, Tian ; Xing, Huili ; Seabaugh, Alan ; Jena, Debdeep

Author_Institution

Dept. of Electr. Eng., Notre Dame Univ., Notre Dame, IN

Volume

29

Issue

12

fYear

2008

Firstpage

1344

Lastpage

1346

Abstract

A graphene nanoribbon (GNR) tunnel field-effect transistor (TFET) is proposed and modeled analytically. Ribbon widths between 3 and 10 nm are considered to effect energy bandgaps in the range of 0.46 to 0.14 eV. It is shown that a 5-nm ribbon width TFET can switch from on to off with only 0.1-V gate swing. The transistor achieves 800 muA/mum on -state current and 26 pA/mum off-state current, with an effective subthreshold swing of 0.19 mV/dec. Compared to a projected 2009 n MOSFET, the GNR TFET can provide 5times higher speed, 20times lower dynamic power, and 280 000times lower off-state power dissipation. The high performance of GNR TFETs results from their narrow bandgaps and their 1-D nature.

Keywords

carbon nanotubes; field effect transistors; nanotube devices; tunnel transistors; MOSFET; ON-state current density; effective subthreshold swing; electron volt energy 0.46 eV to 0.14 eV; energy bandgap effect; field-effect transistor; graphene nanoribbon tunnel transistors; lower off-state power dissipation; size 3 nm to 10 nm; Current density; Doping; Electrostatics; FETs; Helium; MOSFET circuits; Photonic band gap; Power dissipation; Switches; Tunneling; 1-D; Graphene; subthreshold swing; tunnel transistor;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2005650

Filename

4671153