Title :
Dependence of Photosensitive Effect on the Defects Created by DC Stress for LTPS TFTs
Author :
Tai, Ya-Hsiang ; Kuo, Yan-Fu ; Lee, Yun-Hsiang
Author_Institution :
Dept. of Photonics & Display Inst., Nat. Chiao Tung Univ., Hsinchu
Abstract :
In this letter, the photosensitive effect of n-type low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) after DC stress was investigated. It was discovered that the photo-generated carrier behaviors under optical illumination are related to defect types created by different stress conditions of hot-carrier effect and self-heating effect. These two types of defect creation result in the different photosensitivity behaviors of LTPS TFT. A model considering the relation between photosensitivity and defect is proposed to explain the anomalous illumination behaviors after device degradation.
Keywords :
hot carriers; photoconductivity; phototransistors; silicon; stress effects; thin film transistors; DC stress; LTPS TFT; Si; defect creation; hot-carrier effect; n-type low-temperature polycrystalline silicon thin-film transistors; optical illumination; photogenerated carriers; photosensitive effect; self-heating effect; Degradation; Glass; Hot carrier effects; Lighting; Optical films; Photonics; Silicon; Stress; Thin film transistors; Voltage; DC stress; leakage current; photosensitivity; poly-Si thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2006414
