Title :
Wavelength tuning of GaInAsP/InP integrated laser with butt-jointed built-in distributed Bragg reflector
Author :
Tohmori, Y. ; Suematsu, Y. ; Tsushima, H. ; Arai, S.
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
Fine tuning of lasing wavelength was achieved with a butt-jointed built-in DBR laser integrated with an additional tuning waveguide. The plasma effect of the injected carrier was utilised. The wavelength shift of 4.0 Ã… was demonstrated by an injected tuning current of 4.1 mA.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; semiconductor junction lasers; GaInAsP/InP; III-V semiconductors; butt-jointed built-in DBR laser; distributed Bragg reflector; injected carrier; injected tuning current; integrated semiconductor laser; lasing wavelength; plasma effect; tuning; tuning waveguide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830446
