Title :
Capacitance-time transient characteristics of pulsed MOS capacitor application in measurement of semiconductor parameters
Author :
Zhang, X. ; Ding, K.
Author_Institution :
Dept. of Electron. Eng., Hangzhou Univ., China
fDate :
12/1/1993 12:00:00 AM
Abstract :
Using Rabbani´s model for generation width, a differential equation, which describes the capacitance-time (C-t) transient characteristics of pulsed MOS capacitors was obtained. The theoretical (C-t) transient characteristics can be obtained by integrating this differential equation. It has also been shown that the minority generation lifetime of semiconductors can be determined by matching an experimental (C-t) transient characteristic with the theoretical one
Keywords :
capacitance; carrier lifetime; electric variables measurement; metal-insulator-semiconductor devices; minority carriers; transient response; Rabbani model; capacitance-time transient characteristics; differential equation integration; generation width; minority generation lifetime; pulsed MOS capacitor; semiconductor parameter measurement; transient response;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
