DocumentCode
987415
Title
Capacitance-time transient characteristics of pulsed MOS capacitor application in measurement of semiconductor parameters
Author
Zhang, X. ; Ding, K.
Author_Institution
Dept. of Electron. Eng., Hangzhou Univ., China
Volume
140
Issue
6
fYear
1993
fDate
12/1/1993 12:00:00 AM
Firstpage
449
Lastpage
452
Abstract
Using Rabbani´s model for generation width, a differential equation, which describes the capacitance-time (C-t) transient characteristics of pulsed MOS capacitors was obtained. The theoretical (C-t) transient characteristics can be obtained by integrating this differential equation. It has also been shown that the minority generation lifetime of semiconductors can be determined by matching an experimental (C-t) transient characteristic with the theoretical one
Keywords
capacitance; carrier lifetime; electric variables measurement; metal-insulator-semiconductor devices; minority carriers; transient response; Rabbani model; capacitance-time transient characteristics; differential equation integration; generation width; minority generation lifetime; pulsed MOS capacitor; semiconductor parameter measurement; transient response;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
249996
Link To Document