• DocumentCode
    987490
  • Title

    Electroplated Au-GaAs1¿xPx and Au-Ga1¿xAlxAs Schottky barriers

  • Author

    L¿¿pez-Coronado, M. ; Aguilar, Mario ; Mart¿¿nez, M.T. ; Calleja, E. ; Mu¿¿oz, E.

  • Author_Institution
    Universidad Politécnica de Madrid, Departmento de Instrumentación Electrónica, ETS Ingenieros de Telecomunicación, Madrid, Spain
  • Volume
    19
  • Issue
    17
  • fYear
    1983
  • Firstpage
    666
  • Lastpage
    668
  • Abstract
    A novel technique based on pulse electroplating and surface treatment with very slow etching rate solutions has been applied to fabricate Au Schottky barriers on GaAs1¿xPx and Ga1¿xAlxAs. Device characteristics are compared to the behaviour of vacuum-deposited barriers. The present technique allows a simple and fast procedure to obtain Schottky barriers for material evaluation and device applications.
  • Keywords
    Schottky effect; electroplating; etching; semiconductor-metal boundaries; Au-Ga1-xAlxAs Schottky barriers; Au-GaAs1-xPx Schottky barriers; device applications; etching rate solutions; material evaluation; pulse electroplating; surface treatment;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830454
  • Filename
    4247953
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=987490