DocumentCode :
987534
Title :
Logic design based on negative differential resistance characteristics of quantum electronic devices
Author :
Mohan, S. ; Mazumder, P. ; Haddad, G.I. ; Mains, R.K. ; Sun, J.P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume :
140
Issue :
6
fYear :
1993
fDate :
12/1/1993 12:00:00 AM
Firstpage :
383
Lastpage :
391
Abstract :
New quantum electronic devices such as resonant tunnelling diodes and transistors have negative differential resistance characteristics that can be exploited to design novel high-speed circuits. The high intrinsic switching speed of these devices, combined with the novel circuit structures used to implement standard logic functions, leads to ultrafast computing circuits. The new circuit structures presented here provide extremely compact implementations of functions such as carry generation and addition. The most significant impact of these circuits on the field of logic design is the introduction of a totally new set of relative costs of various basic gates; re-evaluation of the logic in the light of these new cost functions leads to ultrafast and compact designs
Keywords :
logic design; logic gates; negative resistance; resonant tunnelling devices; tunnel diodes; basic logic gates; carry generation; cost functions; high-speed circuits; intrinsic switching speed; logic design; logic functions; negative differential resistance characteristics; quantum electronic devices; resonant tunnelling diodes; ultrafast computing circuits;
fLanguage :
English
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings G
Publisher :
iet
ISSN :
0956-3768
Type :
jour
Filename :
250005
Link To Document :
بازگشت