Low-threshold lasers fabricated by alignment-free impurity induced disordering

Author

Floyd, P.D. ; Chao, C.P. ; Law, K.-K. ; Merz, J.L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

5

Issue

11

fYear

1993

Firstpage

1261

Lastpage

1263

Abstract

An Si/SiN/sub x//Si trilayer diffusion source and mask is described and applied to an alignment-free process for fabricating lasers by impurity-induced disordering (IID). Edge-emitting lasers with continuous wave threshold currents of 4.8 mA were achieved, and folded-cavity surface-emitting lasers with Si disordered waveguides were demonstrated for the first time with a threshold of 11 mA. The process that makes possible self-aligned-metallization on a diffusion defined stripe will be useful in fabricating narrow stripe IID lasers and simplify processing for integration of IID waveguide devices.<>

Keywords

current density; impurities; masks; metallisation; optical waveguides; optical workshop techniques; semiconductor lasers; 11 mA; 4.8 mA; AlGaAs:Si-AlGaAs:Be; Si-SiN-Si; Si/SiN/sub x//Si trilayer diffusion source; alignment-free impurity induced disordering; continuous wave threshold currents; diffusion defined stripe; edge-emitting lasers; folded-cavity surface-emitting lasers; integration; laser fabrication; low-threshold lasers; mask; narrow stripe IID lasers; self-aligned-metallization; Etching; Gallium arsenide; Impurities; Metallization; Optical device fabrication; Optical materials; Quantum well lasers; Surface emitting lasers; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.250038

Filename

250038