DocumentCode :
987705
Title :
Development in High-Speed Switching Elements
Author :
Lo, Arthur W.
Author_Institution :
Components Division, IBM Corp., Poughkeepsie, N.Y.
Volume :
50
Issue :
5
fYear :
1962
fDate :
5/1/1962 12:00:00 AM
Firstpage :
1067
Lastpage :
1072
Abstract :
Recent developments in high-speed switching elements are outlined to indicate the trend of recent work and thoughts on physical implementation of high-speed digital data processing systems. Four outstanding switching elements, thin film cryotron, high-speed transistor, microwave parametric phase-locked oscillator, and tunnel diode, as well as some related circuit and fabrication techniques, are briefly described and commented on. The transistor remains as the predominant switching element for these systems, largely because of the vast experience with it. The other technologies are presenting an ever increasing challenge to the transistor in this area.
Keywords :
Data processing; Diodes; Fabrication; Microwave circuits; Microwave oscillators; Microwave theory and techniques; Microwave transistors; Switching circuits; Thin film circuits; Thin film transistors;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1962.288007
Filename :
4066816
Link To Document :
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