• DocumentCode
    987706
  • Title

    Simulation of GaAs submicron FET with hot-electron injection structure

  • Author

    Tomizawa, Keiichi ; Awano, Yuji ; Hashizume, Nobuya ; Kawashima, Mitsumasa

  • Author_Institution
    Electrotechnical Laboratory, Tsukuba, Japan
  • Volume
    19
  • Issue
    17
  • fYear
    1983
  • Firstpage
    697
  • Lastpage
    698
  • Abstract
    Two-dimensional Monte Carlo simulation of a 0.25 ¿m-long GaAs FET with an (Al, Ga)As/GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 ¿m) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fr is found to reach about 250 GHz.
  • Keywords
    III-V semiconductors; Monte Carlo methods; field effect transistors; gallium arsenide; hot carriers; semiconductor device models; (Al, Ga)As/GaAs heterojunction source; GaAs FET; Monte Carlo simulation; hot-electron injection structure; mean electron velocity; semiconductor device models; unity-current-gain frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830475
  • Filename
    4247974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=987706